How latecomers catch up to leaders in high-energy physics as Big Science: transition from national system to international collaboration

Scientometrics - This study describes the increase of research productivity of latecomer countries (latecomers) in the high-energy physics (HEP) community by research strategies based on a national...     

Phase-pure Na3V2(PO4)2F3 embedded in carbon matrix through a facile polyol synthesis as a potential cathode for high performance sodium-ion batteries

In this study, a pseudo-layered Na super-ionic conductor of Na₃V₂(PO₄)₂F₃ (NVPF)/C cathode for sodium-ion batteries is prepared successfully using a facile polyol refluxing process without any impurity phases. The X-ray diffraction and Rietveld refinement results confirm that NVPF possesses tetragonal NASICON-type lattice with a space group of P₄₂/mnm. In this preparative method, polyol is utilized as a solvent as well as a carbon source. The presence of nanosized NVPF particles in the carbon network is confirmed by field-emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). The existence of carbon is analyzed by Raman scattering and elemental analysis. When applied as a Na-storage material in a potential window of 2.0–4.3 V, the electrode exhibits two flat voltage plateaus at 3.7 and 4.2 V with an electrochemically active V³⁺/V⁴⁺ redox couple. In addition, Na₃V₂(PO₄)₂F₃/C composite achieved a retention capacity of ~ 88% even after 1,500 cycles at 15 C. Moreover, at high current densities of 30 and 50 C, Na₃V₂(PO₄)₂F₃/C cathode retains the specific discharge capacities of 108.4 and 105.9 mAh·g^–1, respectively, revealing the structural stability of the material prepared through a facile polyol refluxing method.

     

Inconel 617 alloy creep life augmentation by graphene transfer coating

Journal of Mechanical Science and Technology - Presently, countries are trying to increase their energy efficiency. Therefore, the operating temperatures of very high temperature reactor (VHTR) and...     

Effect of ZnO/K2O ratio on the crystallization sequence and microstructure of lithium disilicate glass-ceramics

The effect of ZnO/K₂O (Z/K) ratio on the crystallization sequence and microstructure of lithium disilicate (Li₂Si₂O₅: LS2) glass-ceramics was carefully investigated for the SiO₂-Li₂O-K₂O-ZnO-P₂O₅ system. The Z/K ratios of precursor glasses were varied from 0 to 3.5 while the nucleating agent of P₂O₅ and glass modifiers of ZnO plus K₂O were fixed to have 1.5 and 4.5 mol% relative to LS2, respectively. For the samples prepared by two-stage heat treatments of 500 °C for 1 h and 800 °C for 2 h in air, the LS2 nucleation rate was increased with increasing the Z/K ratio due to the variation in crystallization sequence from type II (Li₂SiO₃: LS) to type I (LS + LS2) in addition to an amorphous phase separation in base glass. Consequently, with increasing the Z/K ratio, the LS2 crystalline phase within the glass matrix continuously changed from larger acicular ones to smaller equiaxed ones.     

Scanning Probe Lithography Patterning of Monolayer Semiconductors and Application in Quantifying Edge Recombination

Scanning probe lithography is used to directly pattern monolayer transition metal dichalcogenides (TMDs) without the use of a sacrificial resist. Using an atomic‐force microscope, a negatively biased tip is brought close to the TMD surface. By inducing a water bridge between the tip and the TMD surface, controllable oxidation is achieved at the sub‐100 nm resolution. The oxidized flake is then submerged into water for selective oxide removal which leads to controllable patterning. In addition, by changing the oxidation time, thickness tunable patterning of multilayer TMDs is demonstrated. This resist‐less process results in exposed edges, overcoming a barrier in traditional resist‐based lithography and dry etch where polymeric byproduct layers are often formed at the edges. By patterning monolayers into geometric patterns of different dimensions and measuring the effective carrier lifetime, the non‐radiative recombination velocity due to edge defects is extracted. Using this patterning technique, it is shown that selenide TMDs exhibit lower edge recombination velocity as compared to sulfide TMDs. The utility of scanning probe lithography towards understanding material‐dependent edge recombination losses without significantly normalizing edge behaviors due to heavy defect generation, while allowing for eventual exploration of edge passivation schemes is highlighted, which is of profound interest for nanoscale electronics and optoelectronics.     

A dynamic control technique to enhance the flexibility of software artifact reuse in large-scale repository

The Journal of Supercomputing - Reuse is the activity of developing new software systems using software components (or artifacts) that are already proven and reliable. However, traditional...     

A simple explicit single step time integration algorithm for structural dynamics

In this article, a new single-step explicit time integration method is developed based on the Newmark approximations for the analysis of various dynamic problems. The newly proposed method is second-order accurate and able to control numerical dissipation through the parameters of the Newmark approximations. Explicitness and order of accuracy of the proposed method are not affected in velocity-dependent problems. Illustrative linear and nonlinear examples are used to verify performances of the proposed method.